K4B4G0846E-BYMA
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K4B4G0846E-BYMA
Brand：Samsung
Model：K4B4G0846E-BYMA
stock：30000
Store：ShenZhen/Hongkong
Price：1+
$0.69
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
WhatsApp：+86 19166251823
Email：online3@ssf-asia.com
Wechat：+86 19166251823
Team：online1@ssf-asia.com
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product details
Common problem
Industry trends
| Country of origin | China/USA/Japan, etc |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Part status | On sale |
| storage capacity | 4 Gb |
| Encapsulation/Housing | 78FBGA |
| working temperature | -40 ~ 95 °C |
| Voltage - Supply | 1.2 V |
Common problem
Industry trends
SK Hynix successfully developed 238 layers of NAND flash memory
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Samsung came with news that there was a change in building a factory in the United States, and the US plan may be lost
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SK Hynix: It has secured the supply of equipment to its Chinese plant without obtaining a license within one year
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DRAM is severely oversupplied and is not expected to stop until the third quarter of 2023
Memory chip manufacturers collectively "winter"
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Expected 15%-20% decline in NAND Flash prices in the fourth quarter
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